New release of the DEVSIM® Semiconductor Device Simulator
December 18, 2018: DEVSIM LLC announces the release of version 1.0 of the DEVSIM® TCAD Semiconductor Device Simulator. Open source since 2013, DEVSIM® uses finite volume methods to solve for the electrical behavior of semiconductor devices on a mesh. In addition to the standard drift-diffusion equations, the density-gradient method can be used to account for quantum effects near semiconductor insulator boundaries. This approach is suitable for:
- Simulating Advanced Semiconductor Devices
- Capacitance Extraction
- Generalized PDE Simulation
In this release, the software has been extended to support easier integration into existing Python installations on macOS, Microsoft Windows, and Linux operating systems. In addition, the version numbering system has been adapted to reflect major and minor changes to the software.
DEVSIM® is available from https://devsim.org. The site include more information for those who wish to use or participate in development of this software.
About DEVSIM LLC
DEVSIM LLC was founded in 2008 to provide TCAD simulation software and programming services. For more information, please visit https://devsim.com.
DEVSIM® is a registered trademark of DEVSIM LLC. All product names, trademarks and registered trademarks are property of their respective owners.
DEVSIM simulation example slides are presented here:
Semiconductor Device Simulation Using DEVSIM
SISPAD 2018 will be September 24-26th in Austin, TX.
The SISPAD conference series provides an open forum for the presentation of the latest results and trends in process and device simulation. The conference is the leading forum for Technology Computer-Aided Design (TCAD) and is held alternatingly in the United States, Japan, and Europe in September.
The source files to the DEVSIM manual are now available from:
The Density Gradient Method has been implemented as a simulation example for DEVSIM. This method is a quantum mechanical correction for carrier densities near a semiconductor/insulator interface.
The example scripts simulate both a 1D and 2D MOSCAP structure. The scripts generate plots to visualize the results.
It can be downloaded from https://github.com/devsim/devsim_density_gradient.
Semiconductor Device Simulation Using DEVSIM is now available from our site.
DEVSIM is a technology computer aided design (TCAD) simulation software. It is released under an open source license. The software solves user defined partial differential equations (PDEs) on 1D, 2D, and 3D meshes. It is implemented in C++ using custom code and a collection of open source libraries. The Python scripting interface enables users to setup and control their simulations.
In this chapter, we present an overview of the tool. This is followed with a bipolar junction transistor (BJT) design and characterization example. A collection of open source tools were used to create a simulation mesh, and visualize results
The Python scripts for simulation are here:
The DEVSIM source code is now released under the Apache License, Version 2.0. It was previously under the LGPL 3.0. The license change is intended to promote adoption of the software and attract new contributors. A brief synopsis of the license is here.
The spirit of the Apache License is also more in line with the license terms packages that DEVSIM relies upon. More information about DEVSIM is available from https://www.devsim.org.
The IEEE Journal of the Electron Devices Society has published an article titled:
Best Practices for Compact Modeling in Verilog-A
The article is freely available for download via open access. It covers how to avoid many of the pitfalls in using Verilog-A compact modeling. It is unclear if this might be related to the effort described in our previous post.
One of the other sites I manage is TCAD Central – https://www.tcadcentral.com. It is a resource concerning TCAD and semiconductor device simulation. Some of the content is no longer current. Please let me know if you have any updates or news in this blog or on the TCAD Central site.
An interesting project from the IuE Summer of Code 2014 is a collection of 3D CAD models. On the CAD models page are examples of these devices.
- MOSFET and Single-Gate
- Tri Gate
- Special Gate-Form Devices
Using the FreeCAD open source CAD modeling software. The student created these models from examples in the literature. There are also tutorials at the bottom of the page for building a Double-Gate MOSFET and Tri-Gate devices.