Category Archives: Announce

DEVSIM 1.0.0 Release

New release of the DEVSIM® Semiconductor Device Simulator

December 18, 2018: DEVSIM LLC announces the release of version 1.0 of the DEVSIM® TCAD Semiconductor Device Simulator. Open source since 2013, DEVSIM® uses finite volume methods to solve for the electrical behavior of semiconductor devices on a mesh. In addition to the standard drift-diffusion equations, the density-gradient method can be used to account for quantum effects near semiconductor insulator boundaries. This approach is suitable for:

  • Simulating Advanced Semiconductor Devices
  • Capacitance Extraction
  • Generalized PDE Simulation

In this release, the software has been extended to support easier integration into existing Python installations on macOS, Microsoft Windows, and Linux operating systems. In addition, the version numbering system has been adapted to reflect major and minor changes to the software.

DEVSIM® is available from https://devsim.org. The site include more information for those who wish to use or participate in development of this software.

About DEVSIM LLC

DEVSIM LLC was founded in 2008 to provide TCAD simulation software and programming services. For more information, please visit https://devsim.com.

DEVSIM® is a registered trademark of DEVSIM LLC. All product names, trademarks and registered trademarks are property of their respective owners.

SISPAD 2018 in Austin, TX

SISPAD 2018 will be September 24-26th in Austin, TX.

The SISPAD conference series provides an open forum for the presentation of the latest results and trends in process and device simulation. The conference is the leading forum for Technology Computer-Aided Design (TCAD) and is held alternatingly in the United States, Japan, and Europe in September.

Semiconductor Device Simulation Using DEVSIM

Semiconductor Device Simulation Using DEVSIM is now available from our site.

Abstract:
DEVSIM is a technology computer aided design (TCAD) simulation software. It is released under an open source license. The software solves user defined partial differential equations (PDEs) on 1D, 2D, and 3D meshes. It is implemented in C++ using custom code and a collection of open source libraries. The Python scripting interface enables users to setup and control their simulations.

In this chapter, we present an overview of the tool. This is followed with a bipolar junction transistor (BJT) design and characterization example. A collection of open source tools were used to create a simulation mesh, and visualize results

The Python scripts for simulation are here:
https://github.com/devsim/devsim_bjt_example

DEVSIM under new open source license

The DEVSIM source code is now released under the Apache License, Version 2.0. It was previously under the LGPL 3.0. The license change is intended to promote adoption of the software and attract new contributors. A brief synopsis of the license is here.

The spirit of the Apache License is also more in line with the license terms packages that DEVSIM relies upon. More information about DEVSIM is available from https://www.devsim.org.

3D TCAD FINFET Models

An interesting project from the IuE Summer of Code 2014 is a collection of 3D CAD models. On the CAD models page are examples of these devices.

  • MOSFET and Single-Gate
  • Double-Gate
  • Tri Gate
  • All-Around-Gate
  • FlexFET
  • Special Gate-Form Devices

Using the FreeCAD open source CAD modeling software. The student created these models from examples in the literature. There are also tutorials at the bottom of the page for building a Double-Gate MOSFET and Tri-Gate devices.

2dmatter.com

The NanoTCAD ViDES team has announced their new website, http://www.2dmatter.com.

From their announcement:

The website is intended to be a useful tool in order to link to all the recent publications concerned with Two-dimensional materials from the main journals in the field, i.e., (up to now) Physical Review Letters, Physical Review B, Applied Physics Letters, IEEE Transaction on Electron Devices, IEEE Electron Device Letters, IEEE Nanotechnology, Proceedings of IEEE, Scientific Reports, Nature Nanotechnology, ACS NANO and Nano Letters.

Fujitsu Simulates Graphene Device Using Open Source Tool

Fujitsu announced the simulation of a 3030 Atom Nano device here on January 14th, 2013. The simulation took 20 hours on their supercomputer to simulate the electrical properties of graphene and an insulating layer, using OpenMX Material Explorer.

Even more interesting is the news that OpenMX is an open source tool available from openmx-square.org under the terms of the GPL.

Welcome

This blog focuses on both EDA and TCAD software.  From time to time I’ll be posting about these topics and hope that you find these useful.